重掺杂硅中的氧沉淀

On Oxygen Precipitation in Heavily Doped Silicon

采用X射线双晶衍射法对重掺硼、重掺锑样品中的氧沉淀行为进行了研究,分析了热处理条件、掺杂剂种类对重掺硅中氧沉淀的影响.实验结果表明:由于氧沉淀诱发缺陷间的相互作用、氧沉淀的重溶以及氧的外扩散等原因,在长时间高温热处理时,晶片表面完整性得到改善;重掺硼样品中的氧沉淀较重掺锑样品中的氧沉淀明显.实验中还观察到了氧沉淀重溶现象,进一步验证了理论分析结果.

The behaviors of oxygen precipitation both in heavily Bdoped samples and in heavily Sbdoped ones are investigated by DXS.The effect of thermal treatment,temperature and dopant types on oxygen precipitation is analyzed.The experimental results show that the integrity of the wafers' surface is improved when they are retreated under high temperature for a long time.This phenomenon is caused by the interaction of the defects induced by oxygen precipitation,by the redissolution of oxygen precipitation,and by the external diffusion of the oxygen.The oxygen precipitation in heavily Bdoped samples is more obvious than that in heavily Sbdoped ones.Moreover,the redissolution phenomenon of oxygen precipitation is observed,and this just confirms the analysis on the above experiment results.