摘要
用２０～３４ｋｅＶ能量的电子束轰击锆靶，从而测得锆元素的Ｋ壳层电离截面。这些数据是国际上首次报道。在实验中采用电子输运双群模型修正了由厚衬底产生的反射电子 对计数的影响。同时用蒙特－卡罗ＥＧＳ４程序计算了电子在质量厚度为２４．３μｇ／ｃｍ２的锆靶中的平均路径长度。
Through bombarding the Zr target by the electrons at energies from 20keV to 34 keV. the K-shell ionization cross section of Zr element is obtained. These data are reported for the first time in the world. In the experiment, the influence of the electrons reflected from the thick substrate was corrected by means of a bipartition model of the electron transport. The mean path of the electrons passing through the Zr target of 24. 3ig/cm' mass thickness is calculated by the EGS4 program of Monte Carlo techniquel.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2001年第1期117-119,共3页
High Power Laser and Particle Beams
基金
教育部科学技术重点项目资助课题!(99202)
关键词
电离截面
电子碰撞
电子输运
ionization cross sections
electron impact
electron transport
