摘要
采用直流反应磁控溅射的方法,在衬底温度为350℃的条件下溅射高纯钛靶,并在玻璃衬底上制备了TiO2薄膜。采用正交设计法探讨了溅射气压、溅射电流、氧氩比和溅射时间等实验条件对TiO2薄膜结构的影响。经过X射线衍射和拉曼光谱分析,制备结晶良好的锐钛矿结构TiO2薄膜的最佳实验条件为:溅射气压0.3Pa;溅射电流0.7A;氧氩比1∶3;溅射时间40min;退火温度650℃。
TiO_2 thin films were grown on glass substrate by DC reactive magnetron sputtering at 350 ℃. The experiments were designed by orthogonalizing method for many factors: the sputtering pressure, the ratio between oxygen and argon, sputtering current and sputtering time. The effect of each factor on the structure of TiO_2 thin films was investigated. Judging from the XRD spectra and Raman spectra, the optional process conditions under which Anatase TiO_2 Thin films were deposited as fellows: the sputtering pressure is 0.3 Pa, the ratio between oxygen and argon is 1∶3, sputtering current is 0.7A, the sputtering time is 40 minutes, the annealing temperature is 650 ℃.
出处
《真空与低温》
2003年第4期221-223,共3页
Vacuum and Cryogenics
