摘要
由于声电荷转移(ACT)这一新颖的高速缓冲抽样技术的发明,使得新一代高速高频信号处理器件的实现成为可能。本文研究了第二代平面结构的ACT器件转移沟道的电位分布特性,给出了平面结构ACT延迟线的设计,并研究了ACT器件的工艺实现。
The high-speed and high-frequency signal processor has been enabled by a new high-speed buffer memory technology called acoustic charge transport (ACT) .This paper studies the electrical potential distribution in the transport channel of planar structure ACT device. The design and realization of an ACT delay line is described
出处
《压电与声光》
CSCD
北大核心
1992年第6期1-4,20,共5页
Piezoelectrics & Acoustooptics
关键词
电荷转移器件
声表面波器件
延迟线
acoustic charge transport device, surface acoustic wave, semiconductor device