XRD研究组合离子注入Si的辐射损伤

XRD Dynamic Theory Study the Damage of Coimplantate Si

本文用 DCD法测量了注入能量为 1 80 Kev,不同剂量 ,不同退火温度的 N+ 2 /As+组合注入 Si样片。用 XRD动力学理论和最小二乘法拟合实验曲线 ,得到组合注入层的辐射损伤度 ,并讨论了损伤层在不同退火温度下的恢复情况。结果表明 :剂量为 5× 1 0 15ion/cm2时 ,注入层的衍射曲线出现双峰 ,次峰在主峰左侧 ,说明晶格膨胀且有非晶层形成。退火温度达 90 0℃时 ,衍射线为单峰 ,说明这个退火温度使层结构恢复为连续结构 ,且组合注入的辐射损伤在相同剂量下是单束注入的三倍多。

In this paper,the sample of N+ 2/As+ co-implanted Si with implanted energy at 180KeV,different implanted doses and different annealing temperature were measured by the XRD.The rocking curves were simulated by dynamic theory of X-ray diffraction and optimization method.The lattice damage distributions was obtained,and the restitution of damage at different annealing temperature were given.The results show that, at 5×10 15 ion/cm2,there are two peaks in the curves,the secondary peak is on the left of the primary peak,it indicates that the lattice expanded and the non-lattice has formed.At 900℃,there is only one peak in the curves,it indicates that the layer has changed into continuous structure.The maximum lattice strain of N+ 2/As+ co-implanted Si is about three times as sum of the maximum lattice strain that single implanted.