摘要
Abstract: The optimum parameters are calculated by the large cross - section theory and mode cut - off equation. The effect on reverse bias voltage is analysed by the doping concentration in n+ - Si. This is significant because the reverse bias increases sharply when the doped concentration in n+ - Si is less than 1 x 10~20 cm-3.
The optimum parameters are calculated by the large cross-section theory and mode cut-off equation.The effect on reverse bias voltages in analysed by the doping concentration in n^+-Si.The is significant because the reverse bias increases sharply when the doped concentration in n^+-Si is less than 1×10^20cm^-3.
