摘要
The silicon-on-insulator(SOI)1×2Y-junction optical waveguide switch has been proposed and fabricated,which is based on the large cross-section single-mode rib waveguide condition,the waveguide-vanishing effect and the free-carrier plasma dispersion effect.In the switch,the SOI technique utilizer silicon and silicon dioxide thermal bonding and back-polishing.The insertion loss and extinction ratio of the device are measured to be less than 4.78dB and 20.8dB respectively at a wavelength of 1.3μm and an injection current of 45mA.Response time is about 160ns.
