A New Method of Extraction Carrier Lifetime for IGBT n^-Layers

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摘要 In this article,a new method of extraction carrier lifetime for IGBT n^-layers has been proposed based on an IGBT subcircuit model includes a detailed ambipolar transport analysis of bipolar transistor portion and does not assume the quasi_static conditions.The IGBT n^- layer conductivity modulated resistor is effectively equivalent by a VCR(Voltage Controlled Resistor),the model is fully sipice compatible and can be used to accurately predict the IGBT I-V characteristics,carrier lifetime etc.

出处《微电子学与计算机》 CSCD 北大核心 2002年第12期59-63,67,共6页 Microelectronics & Computer

关键词 IGBT 外延层载流子寿命等效电路模型

分类号 TN322.8 [电子电信—物理电子学]

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参考文献17

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A New Method of Extraction Carrier Lifetime for IGBT n^-Layers

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