摘要
采用新颖的化学溶液淀积方法,配制出可长时间稳定的先体溶液,采用红外分析和热分析等手段,对成膜过程中发生的反应变化进行了分析,结果表明采用新的方法可以增加先体的稳定性,并且确定了薄膜的析晶温度。XRD测试表明薄膜在不到500℃即开始析晶,并且析晶情况与Bi含量有关。对薄膜的电学性能研究表明随着Bi含量的增加,薄膜的漏电性能和抗疲劳特性变差,矫顽场变大,而2Pr在Bi过量10%的情况下达到最大31.6μC/cm2。
Stable precursor and Bi3.25La0.75Ti3O12 thin film were prepared by novel CSD method.FTIR and thermal analysis were performed on the precursor. FTIR spectrum indicated that heat canpromote the chelate reaction between tetrabutyl titanate and acetyl acetone. XRD results of BLTfilms indicated that crystal structure was formed below 500℃ and that was related with bismuthcontent. Along with the increase of bismuth content, leakage and fatigue characters of the BLT filmsdeteriorated and coercive field became larger. 2Pr reached maximum value 31.6μC/cm2 at 10% excessof stoichiometric bismuth content.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第3期49-53,共5页
Semiconductor Technology
