热壁化学汽相沉积Si基GaN奇异面

GaN bizarre surface grown on silicon (111)substrate by the hot wall chemical vapor deposition

利用热壁化学汽相沉积在Si基上生长GaN薄膜。用扫描电镜(SEM)、选择区电子衍射(SAED)、X射线衍射(XRD)、傅里叶红外透射谱(FTIR)和荧光光谱(PL)对样品进行形貌、结构、组分和发光特性的分析。SEM显示在平滑的表面上出现了由绳状、树根状、项链状晶体组成的奇异面。FTIR、XRD和SAED显示生成的GaN奇异面呈六方纤锌矿多晶结构同时含有少量的碳污染。PL谱显示了不同于一般GaN发光谱的发光峰。

GaN films were deposited on Si(111)substrates during the process of hot-wall CVD.Scanning electron microscopy,selected area electron diffraction,X-ray diffraction,Fourier trans-form infrared transmission,and photoluminescence spectroscopy were employed to analyze the surface morphology,structure,composition and optical property of the GaN layer.SEM images show a bizarre GaN surface with the shape of string,root and necklace appears in the uniform film.FTIR,XRD and SAED patterns reveal that the formed bizarre surface is polycrystalline GaN with hexagonal wurtzite structure and it contains trifle carbon contamination.New feature is found in PL pattern of the GaN,which is different from the bulk GaN films.