射频溅射法制备掺铂TiO_2薄膜的基本性质

Basic Properties of Pt-Doped TiO_2 RF Sputtered Thin Films

用射频反应溅射法制备了掺铂的TiO2薄膜.用X射线衍射仪(XRD),紫外 可见(UV vis)光谱仪,电子扫描显微电镜(SEM)和X光电子能谱分析仪(XPS)对薄膜的基本性质进行了表征.研究结果表明:掺铂可以显著促进锐钛矿相的生长;TiO2薄膜在紫外的吸收边发生红移,其光谱响应范围得到了提高;铂氧化物的分解,促使薄膜表面出现了分散分布的微米尺寸岛状突出物,同时导致单质铂在薄膜表面发生富集.

Pt-doped TiO_2 thin films were prepared by RF reactive sputtering.The doped TiO_2 films were characterized by XRD,UV-vis, SEM and XPS. The results showed that: Pt could accelerate the formation of anatase; the absorption band Red-Shift occurred,which improved the absorption spectrum range of the films; something like island formed at the surface of the films because of the decomposition of Pt Oxide, and Pt concentrated on the surface of the films.