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电弧离子镀沉积Al(Cr)-O-N扩散阻挡层的研究 被引量:12

STUDY OF Al-O-N AND Cr-O-N FILMS DEPOSITED BY ARC ION PLATING AS DIFFUSION BARRIERS
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摘要 采用电弧离子镀方法在高温合金DSMll基材上沉积Al-O-N和Cr-O-N薄膜,研究了不同O_2,N_2流量对薄膜相结构的影响以及高温下DSMll/NiCoCrAlY,DSMll/Al-O-N/NiCoCrAlY和DSMll/Cr-O-N/NiCoCrAlY体系的元素互扩散行为。实验结果表明,Al(Cr)-O-N薄膜均为多晶膜,分别具有α-Al_2O_3+六方AlN和Cr_2O_3+CrN的相结构,随着N_2,O_2流量的改变,两相的相对含量发生变化,在1050℃下氧化100h后, Al-O-N层阻挡基体与涂层间元素互扩散的作用优于Cr-O-N层,扩散阻挡层对涂层的氧化动力学影响不大。 Al-O-N and Cr-O-N thin films were deposited on superalloy DSM11 by arc ion plating (AIP). The effects of flow rates of oxygen and nitrogen on phase composition and the interdiffusion of various elements at high temperature between DSM11 substrate and NiCoCrAlY coating were studied in the systems of DSM11/NiCoCrAlY, DSM11/Al-O-N/NiCoCrAlY and DSM11/Cr-O-N/NiCoCrAlY. The results indicate that the Al(Cr)-O-N films are polycrystalline with phase constitution of alpha-Al2O3 + hexagonal AIN or Cr2O3+CrN, respectively. The relative intensity of AIN to Al2O3 or CrN to Cr2O3 is changed with the change of flow rates of oxygen and nitrogen. After oxidation at 1050 degreesC for 100 h, Al-O-N hindered the interdiffusion of elements between DSM11 and NiCoCrAlY more effectively than Cr-O-N film. The diffusion barrier layers hardly influenced the oxidation kinetics of the NiCoCrAlY coating.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2004年第1期83-87,共5页 Acta Metallurgica Sinica
基金 中国科学院方向性课题资助项目KGCX2-212-02
关键词 Al-O-N Cr-O-N 扩散阻挡层 电弧离子镀 Al-O-N Cr-O-N diffusion barrier layer arc ion plating (AIP)
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