摘要
本文介绍了我们研制的1.3微米波长铟镓砷磷大光腔结构半导体激光器的制作及其部分主要光电特性。该器件由于采用大光腔结构,脉冲输出峰值功率大于5瓦,阈值电流密度低于2700A/cm^2工作寿命大于1000小时。
The fabrication and some main optoelectronic properties of the1.3μm InGaAsP-InP LOC semiconductor laser which we have developedare introduced in this paper. As adopting the LOC structure, the deviceshave their pulsed power more thaa 5 W, threshold current densitylower than 2700A/cm^2 and lifetime longev than 1000 hrs.
出处
《长春光学精密机械学院学报》
1989年第4期39-44,共6页
Journal of Changchun Institute of Optics and Fine Mechanics
关键词
激光器
半导体
铟镓砷磷
光腔
1.3μm
InGaAsP--InP
high power
Semiconductor Laser
