添加剂对铜沉积过程的影响

Effect of the Additives on Copper Deposition Process

用线性扫描伏安法、循环伏安法、XRD及SEM研究了添加剂Cl-、骨胶(Glue)和硫脲[(NH2)2CS]在铜沉积过程中的行为。结果表明:当Cl-、Glue、(NH2)2CS单独存在于电解液中时,Cl-的去极化作用使铜沉积反应的峰电流密度增大;Glue和(NH2)2CS的极化作用使铜沉积反应的峰电流密度降低,峰电势负移;当Cl-、Glue和(NH2)2CS共存于电解液中时对铜沉积过程有较强的极化作用,会降低铜沉积反应的极限电流密度和峰电流密度。SEM和XRD测试表明:过量的硫脲会改变铜沉积的晶面择优取向,使铜结晶粒度变大。

The behaviors of the additives Cl^-, glue and thiourea in the copper deposition process were studied by the linear sweep voltammetry and the cyclic voltammetry method and XRD and SEM. The(results) indicate that when Cl^-, glue and thiourea alone exists in the eletrolyte, the depolarization action ofCl^- make peak current density of copper deposition reaction increase. The polarization action of glue and thiourea make peak current density of copper deposition reaction decrease and make peak potential shift to more negative direction. When Cl^-, glue and thiourea coexist in the electrolyte, they have stronger(action) of polarization, and could decrease limiting current density and peak current density of copper deposition reaction. The test results of XRD and SEM indicate that over thiourea could change predominant crystal orientation of copper deposition and enlarge crystal granularity.