摘要
对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。
Highly compensated Si were acquired by diffusing Mn into p-type silicon crystal of 5 W·cm at high temperature.Its light-sensitive characteristic was measured at 25C and 196C. The measurement results show that obtained materials are sensitive to light and the sensitivity is affected by applied voltage, sample temperature and their resistivity.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第3期20-22,共3页
Electronic Components And Materials
基金
国家外国专家局科研基金资助项目(20036500065)
中国科学院西部之光人才培养科研基金资助项目
关键词
p型单晶硅
掺杂锰
高补偿硅
光敏感特性
p-type silicon
Mn-doping
highly compensated silicon
light-sensitive characteristic
