半导体芯片银凸点微电极生长技术

Growth Technology of Ag Boss Microelectrode on Semiconductor Chips

银点微电极生长技术主要用于ISS181系列高压超高速开关二极管的电极成型,是一项制约ISS181封装国产化的瓶颈技术。该项目研究采用了自主开发的流动独立供液、独立供电,整体控制工艺,用于100 mm芯片电极成型,保证银凸点微电极高度40 靘,误差?5%。做到微区银点生长有效控制,大面积一致性好。在流量8 L/min,电压6.5 V,占空比10%的条件下,得到了最佳结果。

Growth technique of Ag boss is mainly used for forming microelectrodes of ISS181 series high voltage and cache switching diode. It is a bottleneck for the packaging ISS181 by Chinese manufacturers. A self-developed technology was used in 100 mm semiconductor chips, including independent flowing silver liquor supply technique, independent electric power supply system and integral control system. With the technogy, the acquired Ag boss microelectrodes are 40 mm?5% in height, and the growth can be so controlled that the microelectrodes are uniform on rather large chips. The optimum conditions are flow 8 L/min, voltage 6.5 V and pulse-time ratio 10%.