摘要
介绍了微波功率器件的发展和前景,对HBT,MESFET和HEMT微波功率器件材料的特点和选取,以及器件的特性和设计做了分类说明。着重介绍了SiGe合金、InPSiC、GaN等新型微波功率器件材料。并对目前各种器件的最新进展和我国微波功率器件的研制现状及与国外的差距做了概述与展望。
This paper introduces the utilities and the prospect of the microwave power device,and shows the design methods and the properties of some microwave power devices individually, including HBT, MESFET and HEMT,and the property and the choice of these devices materials as well. Emphasis is laid on the introduction of some new types of microwave power device materials that include SiGe alloy,SiC and GaN. It also reviews the current development of these devices, the progress of our country' s current research and the gap between China and the developed countries. Prospect in this field is discussed.
出处
《材料导报》
EI
CAS
CSCD
2004年第2期33-37,共5页
Materials Reports
