柱形量子点的一阶声子喇曼散射

One phonon assisted electron Raman scattering in a cylindrical semiconductor quantum dot

从理论上讨论了柱形量子点体系受限类体模,顶表面模和侧表面模参与的一阶声子斯托克斯喇曼散射.给出了有关的选择定则,分析了喇曼散射强度与量子点尺寸以及入射光偏振方向的关系.其中电子结构基于有效质量近似,电子—声子相互作用则考虑Fr hlich作用.讨论结果直接给出电子和声子的有关信息.

The differential cross section for an electron Raman scattering process in a semiconductor quantum dot of cylindrical geometry regarding phonon-associated transition is calculated. Electron states are considered to be completely confined within the QD. We consider the Frhlich interaction to illustrate the theory for a GaAs/AlAs system. The selection rules for the Raman process are given. Numerical results and discussion are also presented for various radius and thickness of the QD. This study can be used to provide direct information about the electron band structure of these systems.