摘要
利用6.42 MeV 窄共振核反应~1H(^(19)F,αγ)^(16)O 研究了辉光放电制备的非晶硅多层膜中氢的深度分布、游动性及其随退火温度的关系。引进高斯分辨函数简化了数据处理过程。对氢污染及测氢标准也进行了讨论。
The hydrogen contents, profiles and the changes of hydrogen mobilities with the annealing tempe ratures in amorphous silicon films, which are deposited on silicon wafers by glow discharge, are studiec by using resonance reaction ~1H (^(19)F,αγ)^(16)O with energy 6.42MeV. We introduce a Gaussian resolution function to simplify the data process , and the problems on hydrogen contamination and hydrogen standard samples are also discussed.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1992年第2期9-14,共6页
Atomic Energy Science and Technology
关键词
非晶硅
多层膜
氢
核反应
Resonance reaction
Multilayer amorphous silicon
Hydrogen profiles function
Gaussian resolution function
