摘要
本文报告了PIXE(Proton Induce X-ray Emission)技术分析Si基片热扩Ni的深度剖面,质子能量为0.7至2.5MeV,比较了两种理论计算结果的差异,并与其它测量方法得的结果作了比较。
In the paper it was reported that the depth profile of Ni which thermally diffused in Si substrate was analysed by PIXE technology. The energy of proton beam was from 0.7 to 2.5 MeV. The calculation results from two theories were compared with each other, and compared with measurement results by other methods
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
1992年第1期2183-2191,共9页
Journal of Atomic and Molecular Physics
关键词
深度
PIXE
入射粒子
硅片
Proton Induce X-ray Emission Van de Graaff accelerator depth profile
