类氖等电子序列的高激发态结构(J=0、2,奇宇称)

THE HIGHLY-EXCITED STATE STRUCTURE (J=0,2 AND ODD PARITY) OF THE NEON ISOELECTRONIC SEQUENCE

本文用本征通道量子亏损理论(EQDT),研究了J=0、2,奇宇称情况下的类氖等电子序列的高激发态结构。得到了NeⅠ—ⅤⅩⅣ的本征通道量子亏损参数(μ_α、U_(1α)),计算了这些类氖体系的全部J=0、2奇宇称Rydberg能级和通道混合系数,并从静电相互作用与自旋-轨道相互作用之间的竞争的角度对结果进行了讨论。能级计算结果与已有的实验值吻合得很好(精度在10^(-6)—10^(-7)数量级)。

In this paper we report the calculation of highly-excited state structure (J = 0,2 and odd parity) for the neon isoelectronic sequence by using the eigen-channel quantum defect theory(EQDT). We obtain the EQDT parameters, μa and Uia of Ne-like systems from NeⅠ to VXⅣ, as functions of effective nuclear charge. The results indicate that the channel interactions gradually diminish along the sequence. This behaviour can be interpreted in terms of the competition between electrostatic and spin-orbit interactions along the sequence. A lot of basic atomic data can be evaluated with these parameters as input. As numerical example, We give the Lu-Fano plots of Ne Ⅰ