硅基光子晶体板的光刻和反应离子刻蚀

Lithography and Reactive Ion Etching of Silicon-Based Photon Crystal Slab

用光刻和反应离子刻蚀的方法对硅材料光子晶体板的制作进行了研究。实验发现,与激光 直写曝光相比,光刻曝光更有利于胶上图形的陡直度。扫描电子显微镜测试表明,反应离子刻蚀后得到深3.3μm,晶格周期10.95μm,占空比50%的孔状光子晶体板结构,孔的陡直度保持较好,基本满足设计要求。

Study on fabrication of silicon-based photon crystal slab with lithography and reactive ion etching is carried out. It is found that compared with laser direct writing exposure lithographic exposure is more benefit for the steepness of-pattern on photoresist. The testing with SEM shows that after reactive ion etching a hole-shaped photon crystal slab with depth of 3.3 μm, lattice cycle of 10.95 μm and duty ratio of 50% is obtained. The steepness of the hole is maintained well and it basically fulfils the design demands.