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无限深球形量子点中类氢杂质态的性质 被引量:2

Properties of Hydrogenic Impurities in Infinite Spherical Quantum Dots
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摘要 选用含有2个变分参数的波函数,利用变分法计算了无限深球形量子点中施主杂质态的束缚能、杂质有效玻尔半径、维里定理值等随量子点尺度的变化关系.计算结果表明,该模型的结果比选用1个变分参数波函数得到的结果有所改进. Relation of hydrogenic impurity binding energy,effective Bohr a _(im) and virial theorem value and quantum dots size and studied variationally by using variational wave functions of containing two parameters.The results show this model is better than that of the wave functions of containing one parameter.
出处 《河北师范大学学报(自然科学版)》 CAS 2004年第2期139-142,共4页 Journal of Hebei Normal University:Natural Science
基金 河北省自然科学基金资助项目(102137)
关键词 量子点 施主杂质 束缚能 维里定理值 有效玻尔半径 quantum dots donor impurities binding energy virial theorem value
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  • 1LI Yongyao1,LUO Xiangqian1 & Helmut Krōger2 1. Department of Physics,Sun Yat-sen University,Guangzhou 510275,China,2.Département de Physique,Université Laval,Québec G1K 7P4,Canada.Bound states and critical behavior of the Yukawa potential[J].Science China(Physics,Mechanics & Astronomy),2006,49(1):60-71. 被引量:2
  • 2戴宪起,黄凤珍,郑冬梅.Al含量对GaN/Al_xGa_(1-x)N量子点中激子态的影响[J].Journal of Semiconductors,2005,26(4):697-701. 被引量:17
  • 3杨洋,冯浩.柱形量子点的能级与电子结构[J].河北北方学院学报(自然科学版),2007,23(1):4-8. 被引量:5
  • 4陆则慰,李秀玲,包景东.研究量子耗散配分函数的变分数值方法[J].计算物理,1997,14(2):195-201. 被引量:1
  • 5ZHU Jia-lin,XIONG Jia-jiong, GU Bing-lin. Confined Electron and Hydrogenic Donor States in a Spherical Quantum Dot of GaAs - Gal - xAlxAs[J]. Phys Rev B, 1990,41(9) :6001-6007.
  • 6PORRAS-MONTENEGRO N, PEREZ-MERCHANCANO S T. Hydrogenic hnpurities in GaAs-(Ga, Al)As Quantum Dots [J]. Phys Rev B, 1992,46(15) :9780-9783.
  • 7PORRAS-MONTENEGRO N, PEREZ-MERCHANCANO S T, LATGE A. Binding Energies and Density of Mpurity States ill Spherical GaAs- ( Ga, Al) As Quantum Dots[J].J Appl Plays, 1993,74 ( 12 ) : 7624- 7626.
  • 8CORELLA-MADUENO A, ROSAS R, MARIN J L, et al. Hydrogenic Impurities in Spherical Quantum Dots in a Magnetic Field [J] .J Appl Phys,2001,90(5) :2333-2337.
  • 9MARTIN G,BOTCHKAREV A, ROCKETT A, et al. Valence-band Discontinuities of Wurtzite GaN, AIN, and InN Heterojunctions Measured by X-ray Photoemission Spectroscopy [ J ]. Appl Phys Lett, 1996,68 (26) : 2541-2543.
  • 10ANGERER R, BRUNNER D,FREUDENBERG F,et al. Determination of the Al Mole Fraction and the Band Gap Bowing of Epitaxial AlxGa1-xN Films [J ]. Appl Phys Lett, 1997,71 ( 11 ) : 1504-1506.

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