摘要
对半绝缘 Ga As晶片进行 As+ 注入 ,注入能量为 4 0 0 ke V ,剂量为 10 1 6 cm- 2 .用这种注入条件下的 Ga As晶片作为吸收体和输出镜 ,在被动调 Q闪光灯泵浦的 Nd∶ YAG激光器上获得了 6 2 ns的单脉冲宽度 .这是迄今为止国内最好的报道结果 .
A passive Q-switched flash-lamp-pumped Nd∶YAG laser with the ion-implanted semi-insulating GaAs wafer is reported.The wafer is implanted with 400keV As+ ions in the concentration of 10 16cm -2.Using GaAs wafer as an absorber and an output coupler,62ns pulse duration of single pulse is obtained.
