Cu-W薄膜表面形貌的分形表征与电阻率

Cu-W Thin film characterized by surface fractal and resistivity

磁控溅射制备铜钨薄膜 ,用原子力显微镜和功率谱密度法分析薄膜生长表面形貌的分形维数 ,发现频段的选择基本不影响分形维数与溅射时间的关系 .随溅射时间延长 ,薄膜厚度增加 ,分形维数增大 ,电阻率随分形维数的增大而升高 .分析分形维数与电阻率的关系 ,认为对同一物质的导电薄膜 。

Thin films of Cu-W were deposited on Si wafers by magnetron sputtering,and characterized by atomic force microscopy(AFM).Power spectra density was used to calculate the fractal dimension of the AFM images.The results show that the fractal dimension values increase with the film thickness and there is a relationship between the fractal dimension and the resistivity of the films.The change of resistivity is directly proportional to the fractal dimension.