摘要
在蓝宝石(0001)衬底上采用金属有机物化学气相淀积(MOCVD)方法生长了未掺杂的Al_(0.15)Ga_(0.05)N外延层,并以此为材料制作了光电导探测器,实验发现探测器具有显著的紫外光响应。分析了探测器持续光电导效应(PPC)的产生机理。
Photoconductive detectors have been fabricated on undoped Al0.15Ga0.85N epilayer grown on sapphire (0001) substrate by metal organic chemical vapor deposition. It was found the detectors have notable UV photoresponse. The mechnism of photoconductor in AlGaN detectors was discussed.
出处
《现代电子技术》
2004年第6期1-2,5,共3页
Modern Electronics Technique
基金
国防预研基金(41308060106)
