摘要
通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)系统上装配反射高能电子衍射仪 (RHEED) ,对外延GaN生长过程进行原位监测。通过分析研究RHEED图像确定衬底清洗、氮化、缓冲层生长。
The reflection high-energy electron diffraction (RHEED) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system designed by us was used to monitor the GaN growth process in-situ. By study of the RHEED images to optimize the condition parameters of substrate cleaning?substrate nitridation?buffer layer growth ?epitaxy layer growth.
出处
《应用激光》
CSCD
北大核心
2004年第1期31-35,共5页
Applied Laser
基金
国家自然科学基金 (6 9976 0 0 8)
86 3计划 (86 3- 715 - 0 11- 0 0 33)资助项目
