PZT铁电薄膜Sol-Gel技术制备和电性能研究

Electrical Properties of Lead Zirconate Titanate Thin Films Fabricated by Sol-Gel Processing

以乙酸铅(Pb(CH3COO)2·3H2O)、钛酸四丁酯(Ti(OC4H9)4)、硝酸锆(Zr(NO3)4·5H2O)替代锆醇盐为原料,通过在Pt/Ti/siO2/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr0.53Ti0.47)O3铁电薄膜.实验结果表明,具有PT种子层的PZT铁电薄膜电性能较好.经600℃热处理的具有PT种子层的PZT薄膜,在1kHz测试频率下,其剩余极化强度和矫顽场分别为20μC/cm2和59kV/cm,介电常数和介电损耗分别为385和0.030.

Lead zirconate titanate (Pb(Zr0.53Ti0.47)O-3, PZT) ferroelectric thin films were deposited onto platinum coated silicon substrates with and without lead titanate(PbTiO3,PT) seeding layers by a modified sol-gel processing using zirconium nitrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate, tetrabutyl titanate, and zirconium nitrate. The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated. The results show that the PZT thin films are of uniformity, density, and crack-free. The corresponding remanent polarization(P-r) and coercive field(E-c) are 20muC/cm(2) and 59kV/cm respectively. Dielectric constant and loss tangent of PZT thin films with PT seedings are 385 and 0.03, respectively.