衬底偏压和退火对ITO膜结构和成分的影响

Structural of ITO Thin Film Affected by Base Bias-voltage and Annealing

ＩＴＯ膜的结构直接决定其光电性质，因而对其结构的研究就显得极其重要。本文报 道了不同衬底偏压和不同退火温度对ＩＴＯ膜结构的影响。结果表明，一定负偏压有助 于（２２２）晶面择优生长，一定退火温度有助于（６２２）晶面择优生长。退火与否，对膜中 Ｉｎ、Ｓｎ含量影响不大。

Because the optical and electricity property of ITO thin film is decided by its structure,so that the study on the structure of ITO thin film is very important at present.We reported that the structure of ITO thin film is affected by Base Bias-Voltage and annealing temp in this paper.A negative Base Bias-voltage could help growth of crystal face along(222)crystal orientation. Annealing could help crystal growth along (622) crystal face orientation. The component of In. and Sn haven't serious affected if we gave annealing or not.