摘要
用直流反应磁控溅射法制备了玻璃基TiO2薄膜。溅射过程中,Ar气的分压保持在0.85Pa不变,而O2 的分压在0.10Pa^0.65Pa之间变化;镀膜试样在400℃~550℃之间进行热处理。用扫描电镜(SEM)、透射电镜(TEM)和紫外-可见光谱仪研究了薄膜的表面形貌、薄膜沉积速率和光学带隙宽度。结果表明,随着氧气分压从0.10Pa增加到0.65Pa,薄膜沉积速率从4.4nm/min下降到2.2nm/min,光学带隙从3.67eV下降到3.59eV,薄膜表面呈现出均匀的纳米晶粒和纳米孔;550℃热处理有助于较致密薄膜形成纳米晶粒和纳米孔,并降低带隙宽度。
The TiO2 films were deposited on glass by DC reactive magnetron sputtering. During the sputtering the Ar partial pressure was kept at 0.85Pa, while the O-2 partial pressure varied from 0.10Pa to 0.65Pa; the film deposited at 0.15Pa O-2 partial pressure was annealed at 400degreesCsimilar to550degreesC.The micrographs, deposition rate and optical band gap of the films were investigated using SEM, TEM and UV-Vis spectroscopy. The results showed that with the increase Of O-2 partial pressure from 0.10Pa to 0.65Pa, the deposition rate decreased from 4.4nm/min to 2.2nm/min, the optical band gap narrowed from 3.67eV to 3.59eV. At the surface of the film deposited at 0.65Pa, the nanometer size crystal and pore appeared after annealing at 550degreesC.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2004年第3期309-312,共4页
Rare Metal Materials and Engineering
基金
湖北省自然科学基金资助项目(2001abb077)