氢气环境对SiO_2单晶表面性能的影响

INFLUENCE OF HYDROGEN GAS ENVIRONMENT ON SURFACE CHARACTER OF SINGLE CRYSTAL QUARTZ

电阻应变片法测量形变、正电子寿命谱实验结果表明,siO_2单晶经短时、低压渗氢处理后,晶体表面的残余压应力σ、恒力作用下的形变率ε/ε_0、晶体内点缺陷浓度α均随着渗氢压力P、渗氢时间T的乘积X的增加而显著增大,这意味着晶体内部的微观电子浓度发生变化,晶体在低应力作用下发生破裂的可能性增大。

Tests of strain and positron life are studied for single crystal quartz exposured to lowhydrogen pressure for a short time interval. The experiment results show that the surface remainder compressive stress and the relative ratio g strains,ε/ε_(?),are increasing obviously via the product of hydrogen pressure P and treatment time interval T,but the positron lifeτis decreasing. It implies that the point defect concentration is increasing,the density of electron cloud in crystal is changing, and the broken possibility of crystal reduced by the action of low stress is greater.