期刊文献+

用于光纤通信的1.55μm DFB激光器的可靠性分析 被引量:7

Reliability Analysis of 1.55 μm DFB Laser Diodes for Optical Fiber Communication
原文传递
导出
摘要 对用于光纤通信的InP基1.55μmDFB激光器的可靠性进行了研究。测试并分析了100℃时100mA和150mA2种电流应力条件,经过1700h老化,测试分析了激光器特性随时间的变化情况,拟合出在100℃,150mA条件下的激光器寿命在1000h小时左右。根据实验结果对比,提出了一种新的利用温度、电流两个加速度变量同时进行加速老化,快速估计激光器寿命并分析其可靠性的方法。对新的寿命估算方法进行了详细的讨论。 Reliability of InP-based 1.55 μm distributed feedback laser diodes for optical fiber communication were researched. The aging tests of laser diodes at 100°C, 100 mA and 150 mA for 1700 h were performed respectively. The change in characteristics as a function of aging time for laser diodes was analysed. The laser diodes lifetime at the condition of 100°C and 150 mA is about 1000 h. An accelerating aging method using two accelerating variables for estimating laser diodes lifetime was presented based on the contrast of the experimental results.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2004年第4期393-396,共4页 Journal of Optoelectronics·Laser
基金 国家自然科学基金资助项目(90101023)
关键词 光纤通信 DFB激光器 可靠性 中值寿命 激活能 电流应力 分布反馈激光器 Activation energy Failure analysis Feedback Optical communication Optical fibers Reliability
  • 相关文献

参考文献10

  • 1MitstuoFukuda.Reliabilityanddegradationofsemicond uctorlasersandLEDs[]..1991
  • 2MitstuoFukuda,FumiyoshiKano,etal.Reliabilityandde gradationbehaviorofhighlycoherent1.55μmlong cavitymultiplequantumwell (MQW )DFBlasers[].JLight waveTech.1992
  • 3FrankDelorme,GuilhemAlibert,etal.Highreliabilityofhigh powerandwidelytunable1.55μmdistributedBraggreflectorlasersforWDMapplications[].IEEEJ ofSe lectedTopicsinQuanElectron.1997
  • 4HiroshiWada,KeizoTakemasa,etal.Effectsofwellnumberontemperaturecharacteristicsin1.3μmAlGaInAs/InPquantum welllasers[].IEEEJofSelectedTopicsinQuanElectron.1999
  • 5KeizoTakemasa,MunechikaKubota,etal.1.3μmAlGaInAsburied heterostructurelasers[].IEEEPhotonicsTechnologyLetters.1999
  • 6Mitstuo Fukuda.Aging characteristics of InGaAsP/InP DFB lasers[].Optoelectronics-Devices and Technologies.1988
  • 7Mitstuo Fukuda,Genzo Iwane.Correlation between degradation and device chaacteristic changes in InGaAsP/InP buried heterostructure lasers[].Journal of Applied Physiology.1986
  • 8MItstuo Fukuda,Genzo Iwane.Degradation of acitive region in InGaAsP/InP buried heterotructure lasers[].Journal of Applied Physiology.1985
  • 9V Hornung,F Le Due,et al.Study on the reliability of an InP/InGaAsP integrated laser modulator[].Microelectronics and Reliability.1996
  • 10Hiroyasu Mawatari,Mitsuo Fukuda,et al.Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by MOVPE and dry etching technique[].Microelectronics and Reliability.1996

同被引文献66

引证文献7

二级引证文献23

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部