GaN蓝光发光二极管的负电容现象研究

Study of Negative Capacitance Effect of GaN Blue LEDs

利用交流(a.c.)小信号法对GaN蓝光发光二极管(LEDs)的电容 电压特性进行了研究,观察到了GaN蓝光LEDs中的负电容现象,并且测试频率越低、正向电压越大,这种负电容现象就越明显。研究结果表明,这一现象产生的最主要原因是由于GaN蓝光LEDs有源区内注入载流子的辐射复合。

An experimental study on the capacitance-voltage characteristic of GaN blue LEDs (light emitting diodes) was presented by AC small-signal method. Negative capacitance phenomenon of GaN blue LEDs was observed experimentally, and the phenomenon is more obvious with higher voltage or lower frequency. The phenomenon could be attributed to the radiation recombination of the charges in the active zone.