表面态型半导体可饱和吸收镜实现Nd:YAG激光器被动锁模

Passive Modelocking Diode-end-Pumped Nd:YAG Laser with Surface-state Type of Semiconductor Saturable Absorption Mirror

砷化镓半导体材料与空气接触的表面存在密度很高的电子表面态,砷化镓材料内部的电子可以通过这种表面进行驰豫,驰豫时间估计在ps量级。依此原理,制作了一种新型的表面态型半导体可饱和吸收镜,用其作为被动锁模吸收体,实现了半导体端面泵浦Nd:YAG激光器被动连续锁模。在泵浦功率为4W的情况下,获得了连续锁模脉冲序列,重复频率150MHz,锁模脉冲平均输出功率为300mW,脉冲宽度为10ps。

There is high density of electronic surface states at the surface between semiconducting GaAS material and air, by which the electrons of interior GaAs material can relax with the relaxation time of picosecond level. A surface-state semiconductor saturable absorption mirror was introduced, with which the passive continuous wave mode locking of diode-end-pumped Nd:YAG laser is realized. At the pumping power of 4 W, the continuous wave mode locking series was obtained, which has the average output of 300 mW, the frequency of 150 MHz and the pulse duration of 10 ps.