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氮化锆对氮化硅基复相陶瓷室温导电特性的影响 被引量:1

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摘要 一、前言 制备Si_3N_4-ZrO_2复合材料时,Si_3N_4与ZrO_2易反应生成ZrN。ZrN的生成改变了Si_3N_4材料的绝缘性能。本文研究了Si_3N_4-ZrO_2复合材料的室温导电特性。结果表明:Si_3N_4-ZrO_2复合材料在室温下电阻率随加入ZrO_2的量的增加而降低。对同一组成的样品,其电阻率随制备温度的提高而呈下降趋势。这种材料的低电阻率对进一步研究它的放电加工有利。
出处 《科学通报》 EI CAS CSCD 北大核心 1989年第17期1308-1310,共3页 Chinese Science Bulletin
基金 国家自然科学基金
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