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850 nm Implant-confined VCSEL Temperature Characteristics

850 nm Implant-confined VCSEL Temperature Characteristics
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摘要 The temperature characteristics of VCSEL using proton implantation are described,compared with its edge-emitting counterpart.Implant-confined VCSEL operation has been realized up to 120 ℃.These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature. The temperature characteristics of VCSEL using proton implantation are described,compared with its edge-emitting counterpart.Implant-confined VCSEL operation has been realized up to 120 ℃.These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.
作者 LILin ZHONGJing-chang LIUWen-li ZHAOYing-jie ZHANGYong-ming SUWei
机构地区 Nation.KeyLab.ofHighPowerSemiconductorLasers
出处 《Semiconductor Photonics and Technology》 CAS 2004年第1期35-37,共3页 半导体光子学与技术（英文版）
关键词 Temperature characteristic Vertical-cavity surface-emitting lasers Optical losses Laser measurements Laser thermal factors VCSEL 温度特性 光损耗 垂直谐振腔 表面散射激光 激光检测 温度系数
分类号 TN365 [电子电信—物理电子学]
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参考文献6

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Semiconductor Photonics and Technology
2004年 第1期

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