摘要
本文介绍SIMS技术在半导体分离器件剖析中的应用。通过深度分布分析,取得了晶体管有源区表面金属化层和内部掺杂层的深度分布曲线,据此获得晶体管试制的重要工艺参数——基区掺杂表面浓度值及其结深值。文中还讨论了一些存在问题。
This paper introduces SIMS applications in semiconductor discrete eompanent dissector. By depth analysis of the transistor resource area with SIMS, the depth profiles of surface metal coating and internal doping layer can be obtaind. Six pictures of two transistors are given in this paper. Depending on these profiles, we gain important technology parameters——surface concentration and depth of ion implantation in base area. Finally, some problems about this technique are discussed.
出处
《质谱学报》
EI
CAS
CSCD
1992年第2期28-32,共5页
Journal of Chinese Mass Spectrometry Society
关键词
SIMS
晶体管
深度分布
基区
结深
SIMS, transistor, depth profiles, base area, junction depth