GaN表面极性的光电子衍射研究

Photoelectron diffraction study on the polarity of GaN surface

利用x射线光电子衍射的极角扫描模式 ,采集了GaN(0 0 0 1)表面由 (10 10 )和 (112 0 )晶面产生的光电子衍射实验曲线 ,并运用光电子衍射的前向聚焦效应确定了GaN(0 0 0 1)表面是Ga在最外层的极性面 .利用与能量有关的光电子衍射即角分辨光电发射精细结构谱技术并结合多重散射团簇模型计算对GaN(0 0 0 1)表面的极化性质进行了研究 。

We have obtained the photoelectron diffraction curves from (1010) and (1120) crystal planes on GaN(0001) surface by using a polar scan mode of x_ray p hotoelectron diffraction (XPD). On the basis of principle of “forward focusing' of XPD, we have determi n ed that its polarity is Ga termination. The polarity of GaN(0001) surface is als o studied by using energy dependence photoelectron diffraction called angle_res o lved photoemission extended fine structure, as well as the calculation o f multiple scattering cluster models, which confirmed that its polarity is Ga te rmination.