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超高真空中SrTiO_3薄膜同质外延生长的过程研究 被引量:8

Homoepitaxial Growth of SrTiO_3 Thin Film in UHV
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摘要 在超高真空下利用激光分子束外延 (LMBE)方法基于SrTiO3 (10 0 )单晶基片同质外延SrTiO3 薄膜。通过反射式高能电子衍射 (RHEED)对生长过程进行原位监测 ,发现对基片的预热处理明显有利于改善其晶面结构 ,当在其上同质外延Sr TiO3 薄膜时 ,容易实现单晶层状生长模式 ,并得到原子级平整度的铁电薄膜。 Homoepitaxial SrTiO 3 thin film was grown by laser molecular beam epitaxy(LMBE) on SrTiO 3(100) single crystal substrates in ultrahigh vacuum(UHV).The growth process was in situ monitored with reflective high energy electron diffraction(RHEED).We found that the crystal surface structure was obviously improved due to the pre annealing of the substrates.During the homoepitaxy of SrTiO 3 thin film the single crystal layer by layer growth mode was achievd and the atomically smooth films were obtained.
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2004年第1期63-66,共4页 Chinese Journal of Vacuum Science and Technology
关键词 超高真空 SRTIO3薄膜 同质外延生长 激光分子束外延法 LMBE 反射式高能电子衍射 铁电薄膜 UHV,SrTiO 3,Homoepitaxy,RHEED,layer by layer growth mode
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参考文献9

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