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低能量质子辐照对背场硅太阳电池电性能影响的研究

LOW-ENERGY PROTON IRRADIATION EFFECTS ON THE ELEXTRICAL PROPERTIES OF BACK-FIELD Si SOLAR CELL
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摘要 研究了在模拟空间质子辐照环境条件下,质子能量分别为60 keV、150 keV,辐照剂量为1×1013~2×1016cm-2时,背场硅太阳电池的电性能的变化。试验表明,电池的开路电压Voc、短路电流Isc、最大输出功率Pmax随着质子能量和辐照剂量的增加出现了大幅衰降。随着能量的增大Voc和Pmax衰降幅度明显大于Isc,而随辐照剂量的增加短路电流Isc衰降幅度要比Voc和Pmax大得多,并且随着质子能量的增大短路电流,Isc与辐照剂量呈明显的线性关系。当质子能量为60keV,辐照剂量为1.2×1013cm-2时,Pmax/P。衰降到75%。通过深能级瞬态能谱X射线激发光电子能谱和红外光谱,初步分析了能量小于200 keV质子辐照导致电池电性能衰降的原因。 Changes in the electrical properties of back-field Si solar cells, induced by the simulated space proton environment, were studied. The proton energy was 60 keVand 150 keV, and the proton fluence was from 1 × 1013 to 2 × 1016 cm-2. This experiment indicated that the open-circuit voltage ( Voc), the short-circuit current (Isc) and the maximum power output (Pmax) suffered big degradations with the proton energy and the proton fluence increasing. With the proton energy increasing, the degradations of Voc and Pmax were more obvious than that of Isc. However, with the proton fluence increasing, the degradation of Isc was much bigger than those of Voc and Pmax- After 60 keV proton fluence of 1 × 1013cm-2, the degradation of Pmax reached 75 %. It was also observed that, with the proton energy changing, there was an obvious linear relation between Isc and the proton fluence. A preliminary analysis of the dependence between the irradiation induced electrical properties degradation and the related configuration change was made by DLTS, XPS and IR spectra measurements.
出处 《太阳能学报》 EI CAS CSCD 北大核心 2004年第1期99-103,共5页 Acta Energiae Solaris Sinica
基金 国家973科研项目(G19990650)
关键词 硅太阳电池 模拟空间环境 质子辐照 Si solar cell space environmental simulation proton irradiation
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