多晶碘化汞厚膜的生长及其性质研究

Growth and Characterization of Polycrystalline Mercuric Iodide Thick Films

采用热壁物理气相沉积法(hot wallPVD)制备HgI2多晶厚膜,采用XRD、金相显微镜等手段对其进行表征,结果表明多晶HgI2厚膜呈定向(001)晶向生长且晶粒尺寸大小均匀。并分析讨论了不同温度对厚膜生长的影响。通过对其I V特性的测试表明其具有高的电阻率(达1011Ω·cm)和较好的线性关系。

Polycrystalline HgI_2 thick films were prepared by hot wall physical vapor deposition. Films were characterized by powder X-ray diffraction and metallography. The result indicated that polycrystalline HgI_2 thick films have good uniformity and are oriented perpendicular to the substrate. We discussed different growth temperature parameter versus the quality of thick films. According to its electric properties testing it is shown that the HgI_2 thick films have high resistance(10^(11)Ω·cm) and excellent linearity.