摘要
本文采用气体光声室检测方法,研究了在较低的斩波频率(低于500Hz)下,半导体材料硅、锗、砷化镓和碲化镉的光声频率特性,得出了改进的高灵敏度光声室光声信号的理论表达式,给出了R-G理论的修正项,其理论计算和实验结果符合得较好。
We investigated the photo-acoustic frequency properties of Si, Ge, GaAs and CdTe at lower frequency by the photo-acoustic cell detected mething, expression of the photo-acoustic signal for the improved high sensitivity photo-acoastic cell was obtained and a modified term of the R-G theory was given. The experimental results are in good agreement with the theoretical calculations.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1992年第6期419-425,共7页
Chinese Journal of Lasers
关键词
光声光谱
激光
半导体
光声室
photo-acoustic spectrum, laser, semiconductor
