摘要
β-C3N4是Cohen等人从理论上预言的一种可能比金刚石更硬的物质,含有β-C3N4的碳氮膜具有优异的电学、光学和机械特性,在很多领域有应用前景。人们已经应用多种方法进行碳氮膜的制备。本文将对等离子体技术在碳氮膜制备中的应用进行综述,并在成膜速率、成膜质量等方面,对以往工作成果进行论述;最后将讨论沉积过程中几个参量对碳氮膜沉积速率、膜结构等的影响。
β-C_3N_4, as predicted theoretically by Cohen et al, is a material that may have higher hardness than diamond. The carbon nitride films containing β-C_3N_4 have superior electrical, optical and mechanical properties and are promising in many fields. Many ways for preparation of carbon nitride films are available, but the application of plasma technology to deposition of carbon nitride films is discussed here in particular the deposition rate and film formation. The previous works are also reviewed, focusing on the effects of several parameters in deposition process on deposition rate and film formation.
出处
《真空》
CAS
北大核心
2004年第2期8-13,共6页
Vacuum
基金
国家自然科学资金助项目:50002002资助
