磁控溅射膜厚均匀性与靶-基距关系的研究

Relationship between target-substrate distance and thickness uniformity of films deposited by magnetron sputtering

从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性。根据磁控溅射阴极靶刻蚀的实际测量数据 ,建立了靶的刻蚀速率方程 ,以此为依据 ,对膜厚均匀性的有关公式进行了讨论。采用计算机计算了基片处于不同靶 -基距时 ,膜厚均匀性的分布。研究结果表明 ,随着靶基距的增加 ,膜厚均匀性逐渐变好。在同样的靶基距下 ,沿靶长度方向的均匀性明显优于宽度方向。最后 ,通过实验证实了上述结论。

The thickness uniformity of films deposited by planar magnetron sputtering target was analyzed theoretically. According to measured data etched by magnetron sputtering target, an equation of sputtering velocity was given. Based on it, some expressions of thickness uniformity were discussed, with the distribution of thickness uniformity calculated at different target-substrate distances. The results showed that the thickness uniformity becomes better along with the increasing target-substrate distance. At the same target-substrate distance, the thickness uniformity along length is better than along width. These conclusions were proved by experiments.