n沟肖特基势垒隧穿晶体管特性研究

Study of n-Type Schottky Barrier Tunneling Transistor Characterizations

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摘要利用自主开发的蒙特卡罗器件模拟软件 ,对 n沟肖特基势垒隧穿晶体管 (SBTT)的输出特性和转移特性进行了模拟 ,详细分析了沟道区掺杂浓度 ,源漏硅化物区深度以及栅氧化层厚度对 SBTT特性的影响。 The characterizations of n type Schottky Barrier Tunneling Transistor (SBTT) were simulated using a Monte Carlo Device Simulator. The effects of channel doing, source/drain contact area depth and gate oxide thickness were also discussed in this paper.

作者杜刚刘弋波孙雷刘晓彦韩汝琦

机构地区北京大学微电子所

出处《固体电子学研究与进展》 CAS CSCD 北大核心 2004年第1期10-14,共5页 Research & Progress of SSE

关键词蒙特卡罗器件 n沟肖特基势垒隧穿晶体管输出特性转移特性源漏硅化物区深度栅氧化层厚度 Monte Carlo device simulation Schottky Barrier contact SBTT

分类号 TN386.3 [电子电信—物理电子学]

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二级参考文献1

1叶良修，小尺寸半导体器件的蒙特卡罗模拟，1997年

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固体电子学研究与进展

2004年第1期

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n沟肖特基势垒隧穿晶体管特性研究

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