摘要
报道了一种微波宽带 Ga As单片可变增益低噪声放大器芯片。该芯片采用南京电子器件研究所 76mm圆片 0 .5μm PHEMT标准工艺制作而成。工作频率范围为 2～ 8GHz,在零衰减时 ,整个带内增益大于 2 5d B,噪声系数最大为 3 .5 d B,增益平坦度小于± 0 .75 d B,输入驻波小于 2 .0 ,输出驻波小于 2 .5 ,输出功率大于 1 0d Bm。放大器增益可控大于 3 0 d B。实验发现 ,芯片具有良好的温度特性。该芯片面积为 3 .6mm× 2 .2 mm。
A kind of wide band MMIC variable gain low noise amplifier chip was designed, and fabricated successfully with 0.5 μm PHEMT technology of 3″ GaAs wafer foundry in Nanjing Electronics Devices Institute. After measurement, it was found that from 2 GHz to 8 GHz, at zero attenuation, the LNA achieved a maximum noise figure of 3.5 dB, a minimum power gain of 25 dB as well as a good gain flatness of less than ±0.75 dB, an input VSWR of better than 2.0 while output VSWR of better than 2.5 and an output power of not less than 10 dBm. Its gain could be varied from 0 to 30 dB more. The amplifier also had good temperature characteristics. All components were integrated on a GaAs chip of 3.6×2.2 mm 2.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2004年第1期26-30,43,19,共7页
Research & Progress of SSE
