GaAs微条粒子探测器的设计

The Design of GaAs Microstrip Particle Detectors

介绍了最新研制成功的 Ga As微条粒子探测器的芯片设计和工艺设计。每一微条长度均为 1 70 0 0μm,宽度分别为 2 0、5 0、1 0 0、2 0 0和 3 0 0 μm。微条间距有 5 0、1 0 0、2 0 0和 3 0 0 μm四种 ,芯片面积为 5 .95 mm×1 7.0 0 mm。微条粒子探测器的反向击穿电压最高达 2 40 V,反向漏电流密度最低为 0 .0 2 5 μA/mm2。它对光照有强烈的敏感性。

This paper introduces a new idea and new design of chip and process of the manufacture of GaAs microstrip particle detectors.The length of each microstrip is 17 000 μm,and their widths are 20,50,100,200,300 μm respectively.The pitch of microstrip has 4 kinds,which are 50,100,200 and 300 μm.The area of the chip is 5.95 mm×17.00 mm.Their highest reverse breakdown voltage is 240 V,and the lowest reverse leakage current density is 0.025 μA/mm 2.They have high illumination-sensitivity.The irradiation characteristics of these microstrip particle detectors will be reported in another paper.