AlGaN/GaN异质结构欧姆接触的研制

Design and Fabrication of Ohmic Contact on AlGaN/GaN Heterostructure

研究了 Ga N高温宽禁带半导体外延层上欧姆接触的制备工艺 ,讨论了几种测试方法的优缺点 ,并根据器件制作的工艺兼容性 ,在 n-Ga N样品上获得了 4× 1 0 - 6 Ω·cm2的欧姆接触 ,在 Al Ga N/Ga N异质结构样品上获得了 4× 1 0 - 4Ω· cm2 的欧姆接触。实验结果表明 ,Al Ga N/Ga N上低阻欧姆接触的制备及其工艺兼容性是Ga N

This paper reports the fabrication technique of ohmic contact on GaN and discusses the relative merits for different testing methods. By using the technique compatible with devices fabrication, the specific contact resistance has been achieved to 4×10 -6 Ω·cm 2 on n-type GaN, and to 4×10 -4 Ω·cm 2 on AlGaN/GaN heterostructure. The experimental results indicate that the fabrications of low ohmic contact resistance on AlGaN/GaN and the technique compatibility are the technical difficulties for the GaN heterostructure field effect transistor(HFET).