KHg_4InSe_6的固相合成和性能研究

Solid-state synthesis of KHg_4InSe_6 and its properties

采用反应性熔盐法 ,在 5 5 0℃下合成KHg4InSe6。用扫描电子显微镜 (SEM)观察了该晶体的表观结构 ,该晶体为片状晶体。采用EPM 810Q电子探针显微分析仪对产物晶体进行元素定性定量测定 ,经EDS分析确定了化合物的原子数比为NK∶NHg∶NIn∶NSe≈ 1∶4∶1∶6 ,并用X射线粉末衍射 (XRD)证实该化合物为新晶体。经差热分析 ,该晶体在 30 0℃以下是稳定的。晶体的光吸收特性表明 ,该晶体具有 0 5eV的能隙 ,属于半导体。

A new compound KHg 4InSe 6 was synthesized at 550、℃ by means of a solid reactive flux method.The compound was found to be lamellar by SEM. EPM-810Q electron probe microanalyser was used for the qualitative and quantitive elemental analysis of the single crystal. The crystal was indentified to be new by EDS showing a molar ratio N K∶N Hg∶N In∶N Se≈1∶4∶1∶6. The new crystal was further indentified by powder X-ray differaction experiment. The thermal stablility and light absorbablity of the compound were also investigated by using differential thermal anlysis and diffuse reflective spectra techniques. The experimental results show that the compound can be thermally stable below 300、℃ and it is a kind of semiconductor with an energy gap of 0.5、eV.