摘要
文章在国内首次设计并研制出1200V功率MOS栅驱动集成电路。该电路最高偏置电压(Voffset(max))为1200V,最大输出峰值电流为1A,最高工作频率100kHz,温度范围-55～125°C,可同时驱动系统中用于三相图腾柱式输出的高低端功率器件,是SPIC的一种典型电路。
A 1200 V power MOS gate drive integrated circuit is designed and fabricated in a fabline in China for the first time. The circuit has achieved a V_(offset(max)) of 1200 V, an I_(o(max)) of 1 A, and a maximum operating frequency (f_(max)) of 100 kHz. Its operating temperature range is between -55 °C and 125 °C. It is one of typical SPIC's which is capable of driving both high-side and low-side power devices with three-phase totem-pole output.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第2期138-141,共4页
Microelectronics
基金
模拟集成电路国家重点实验室基金资助项目(51439080101DZ0202)
